PART |
Description |
Maker |
TCO-787RH TCO-786RH TCO-787RH3 |
TCO-787RH TCO-786RH
|
EPSONTOYOCOM[Epson ToYoCom]
|
PA7572PI-20 PA7572P-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array
|
Anachip
|
AA-8140T |
.250X.032 FEMALE QD AVIK. TPD (AA-8140T) 1 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
|
Molex, Inc.
|
ES1D-13-F ES1C-13-F |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13 1 A, 200 V, SILICON, SIGNAL DIODE RECTIFIER FAST-RECOVERY SINGLE 1A 150V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13
|
Diodes, Inc. DIODES INC
|
UGB8JCT UGF8JCT UG8HCT UG8JCT UGB8HCT UGF8HCT |
Dual Ultrafast Plastic Rectifier Series, Forward Current 8A, Reverse Recovery Time 25ns
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59 |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
|
Aeroflex Circuit Technology
|
ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 35A-ifsm 0.875V-vf 25ns 2uA-ir DO-41 5K/REEL-13 30V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
WPS512K8C-20RJMB WPS512K8LB-15RJMB WPS512K8LB-25RJ |
512K x 8 SRAM, 20ns 512K x 8 SRAM, low power, 15ns 512K x 8 SRAM, low power, 25ns 512K x 8 SRAM, 15ns 512K x 8 SRAM, 25ns
|
White Electronic Designs
|
BYW29-50 BYWB29-50 BYWF29-50 BYW29-100 BYW29-150 B |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V
|
Vishay
|
UGF5JT UG5HT UG5JT UGB5HT UGB5JT UGF5HT |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Recovery Time 25ns, Reverse Voltage 500 to 600V From old datasheet system
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BAP816 |
Dioda uniwersalna Non-Volatile Static RAM (nvSRAM); Organization: 32x8; Density: 256KB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: 0° to 70°C
|
Ultra CEMI
|
74F38SJ 74F38SC 74F38PC 74F38 74F38S 54F38LMQB |
RECTIFIER FAST-RECOVERY SINGLE 3A 200V 100A-ifsm 0.9V-vf 25ns 10uA-ir SMB 3K/REEL-13 F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDIP14 Quad Two-Input NAND Buffer (Open Collector)
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|